High-speed optoelectronic devices

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Bibliographic Details
Published in:Science China / Information sciences. - Science China Press, 2010. - 66(2023), 5 vom: 17. Apr.
Main Author: Luo, Yi (Author)
Other Authors: Sun, Changzheng (Author) Xiong, Bing (Author) Wang, Jian (Author) Hao, Zhibiao (Author) Han, Yanjun (Author) Li, Hongtao (Author) Wang, Lai (Author)
Format: electronic Article
Language:English
Published: 2023
ISSN:1869-1919
External Sources:lizenzpflichtig
Description
Summary:Abstract High-speed optoelectronic devices are key components of modern fiber communication systems, and the backbone of information technology. In this paper, we present our work on high-speed devices over the past decades, including high-performance semiconductor lasers and integrated light sources, wideband electro-optic modulators, high saturation power photodetectors, and their applications in both fiber communications and microwave photonics. Gain-coupled distributed feedback (DFB) lasers were fabricated with high single-mode yield. Electroabsorption modulated lasers (EMLs) were demonstrated based on identical epitaxial layer integration scheme, including single channel 40 Gb/s EMLs, and 4 × 25 and 4 × 56 Gb/s EML arrays. Both InP and thin-film lithium niobate based low half-wave voltage electro-optic modulators with modulation bandwidth over 40 GHz were demonstrated. Back-illuminated modified uni-traveling-carrier photodetectors (MUTC-PDs) with high saturation power and bandwidth exceeding 100 GHz were developed. Applications of high-speed optoelectronic devices in fiber-optic links and sub-THz wave generation are presented.
Item Description:© Science China Press 2023
DOI:10.1007/s11432-022-3669-5