The influence of reactor height adjustment on properties in GaN films grown on 6H-SiC by metal organic chemical vapor deposition

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Published in:	Journal of materials science / Materials in electronics. - Springer US, 1990. - 25(2014), 10 vom: 15. Juli, Seite 4268-4272
Main Author:	Tao, Pengcheng (Author)
Other Authors:	Liang, Hongwei (Author) Xia, Xiaochuan (Author) Feng, Qiuju (Author) Wang, Dongsheng (Author) Liu, Yang (Author) Shen, Rensheng (Author) Zhang, Kexiong (Author) Cai, Xin (Author) Luo, Yingmin (Author) Du, Guotong (Author)
Format:	electronic Article
Language:	English
Published:	2014
ISSN:	1573-482X
External Sources:	lizenzpflichtig