Improved quality of GaN epilayer grown on porous SiC substrate by in situ $ H_{2} $ pre-treatment

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Published in:	Journal of materials science / Materials in electronics. - Springer US, 1990. - 24(2013), 9 vom: 01. Mai, Seite 3299-3302
Main Author:	Song, Shiwei (Author)
Other Authors:	Shen, Rensheng (Author) Liang, Hongwei (Author) Liu, Yang (Author) Xia, Xiaochuan (Author) Zhang, Kexiong (Author) Yang, Dechao (Author) Wang, Dongsheng (Author) Du, Guotong (Author)
Format:	electronic Article
Language:	English
Published:	2013
ISSN:	1573-482X
External Sources:	lizenzpflichtig