| Summary: | Abstract This paper reports on the use of phonon spectra obtained with laser Raman spectroscopy for the uncertainty concerned to the optical phonon modes in pure and composite $ ZnO_{1−x} $ ($ Cr_{2} $$ O_{3} $)x. Particularly, in previous literature, the two modes at 514 and 640 $ cm^{−1} $ have been assigned to ZnO are not found for pure ZnO in our present study. The systems investigated for the typical behavior of phonon modes with 442 nm as excitation wavelength are the representative semiconductor (ZnO)1−x ($ Cr_{2} $$ O_{3} $)x (x = 0, 5, 10 and 15 %). Room temperature Raman spectroscopy has been demonstrated polycrystalline wurtzite structure of ZnO with no structural transition from wurtzite to cubic with $ Cr_{2} $$ O_{3} $. The incorporation of $ Cr^{3+} $ at most likely on the Zn sub-lattice sites is confirmed. The uncertainty of complex phonon bands is explained by disorder-activated Raman scattering due to the relaxation of Raman selection rules produced by the breakdown of translational symmetry of the crystal lattice and dopant material. The energy of the E2 (high) peak located at energy 53.90 meV (435 $ cm^{−1} $) due to phonon–phonon anharmonic interaction increases to 54.55 meV (441 $ cm^{−1} $). A clear picture of the dopant-induced phonon modes along with the B1 silent mode of ZnO is presented and has been explained explicitly. Moreover, anharmonic line width and effect of dislocation density on these phonon modes have also been illustrated for the system. The study will have a significant impact on the application where thermal conductivity and electrical properties of the materials are more pronounced.
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