Author Search Results

1

Effect of active-region “volume” on the radiative properties of laser heterostructures with radiation output through the substrate

Effect of active-region “volume” on the radiative properties of laser heterostructures with radiation output through the substrate

by: Nekorkin, S. M.
Published in: Semiconductors (2017)

lizenzpflichtig

electronic Article

2

Experimental determination of the optimum number of quantum wells in multiwell heterolasers with radiation leakage into a substrate

Experimental determination of the optimum number of quantum wells in multiwell heterolasers with radiation leakage into a substrate

by: Nekorkin, S. M.
Published in: Technical physics letters (2014)

lizenzpflichtig

electronic Article

3

Nanoheterostructures with improved parameters for high-speed and efficient plasmon-polariton light emitting Schottky diodes

Nanoheterostructures with improved parameters for high-speed and efficient plasmon-polariton light emitting Schottky diodes

by: Baidus, N. V.
Published in: Semiconductors (2016)

Other Authors: “...Nekorkin, S. M....”
lizenzpflichtig

electronic Article

4

Emission properties of heterostructures with a (GaAsSb-InGaAs)/GaAs bilayer quantum well

Emission properties of heterostructures with a (GaAsSb-InGaAs)/GaAs bilayer quantum well

by: Zvonkov, B. N.
Published in: Semiconductors (2013)

Other Authors: “...Nekorkin, S. M....”
lizenzpflichtig

electronic Article

5

The dependence of relaxation kinetics of photoluminescence from interband transitions in InGaAs/GaAs quantum wells on their distance from an interface with Au

The dependence of relaxation kinetics of photoluminescence from interband transitions in InGaAs/GaAs quantum wells on their distance from an interface with Au

by: Kukushkin, V. A.
Published in: Optics and spectroscopy (2017)

Other Authors: “...Nekorkin, S. M....”
lizenzpflichtig

electronic Article

6

MOS-Hydride Epitaxy Growth of InGaAs/GaAs Submonolayer Quantum Dots for the Excitation of Surface Plasmon–Polaritons

MOS-Hydride Epitaxy Growth of InGaAs/GaAs Submonolayer Quantum Dots for the Excitation of Surface Plasmon–Polaritons

by: Baidus, N. V.
Published in: Semiconductors (2019)

Other Authors: “...Nekorkin, S. M....”
lizenzpflichtig

electronic Article

7

Simultaneous generation of TE0 and TE1 modes with different wavelengths in a semiconducting laser diode

Simultaneous generation of TE0 and TE1 modes with different wavelengths in a semiconducting laser diode

by: Aleshkin, V. Ya.
Published in: Technical physics (2009)

Other Authors: “...Nekorkin, S. M....”
lizenzpflichtig

electronic Article

8

An observation of direct-gap electroluminescence in GaAs structures with Ge quantum wells

An observation of direct-gap electroluminescence in GaAs structures with Ge quantum wells

by: Aleshkin, V. Ya.
Published in: Semiconductors (2015)

Other Authors: “...Nekorkin, S. M....”
lizenzpflichtig

electronic Article

9

Optical characteristics of laser diodes based on A3B5 compounds grown on germanium substrates

Optical characteristics of laser diodes based on A3B5 compounds grown on germanium substrates

by: Aleshkin, V. Ya.
Published in: Technical physics letters (2015)

Other Authors: “...Nekorkin, S. M....”
lizenzpflichtig

electronic Article

10

Anomalous characteristics of lasers with a large number of quantum wells

Anomalous characteristics of lasers with a large number of quantum wells

by: Biryukov, A. A.
Published in: Technical physics (2011)

Other Authors: “...Nekorkin, S. M....”
lizenzpflichtig

electronic Article

11

On a semiconductor laser with a p–n tunnel junction with radiation emission through the substrate

On a semiconductor laser with a p–n tunnel junction with radiation emission through the substrate

by: Kolpakov, D. A.
Published in: Semiconductors (2015)

Other Authors: “...Nekorkin, S. M....”
lizenzpflichtig

electronic Article

12

Dual-frequency GaAs/InGaP laser diode with a GaAsSb quantum well

Dual-frequency GaAs/InGaP laser diode with a GaAsSb quantum well

by: Dikareva, N. V.
Published in: Semiconductors (2017)

Other Authors: “...Nekorkin, S. M....”
lizenzpflichtig

electronic Article

13

GaAs-Based Laser Diode with InGaAs Waveguide Quantum Wells

GaAs-Based Laser Diode with InGaAs Waveguide Quantum Wells

by: Dikareva, N. V.
Published in: Semiconductors (2019)

Other Authors: “...Nekorkin, S. M....”
lizenzpflichtig

electronic Article

14

Control of emission wavelength for InGaAs/GaAs quantum wells and laser structures on their basis by means of proton irradiation

Control of emission wavelength for InGaAs/GaAs quantum wells and laser structures on their basis by means of proton irradiation

by: Akhlestina, S. A.
Published in: Semiconductors (2010)

Other Authors: “...Nekorkin, S. M....”
lizenzpflichtig

electronic Article

15

Controlling the wavelength of InGaAs/GaAs/InGaP lasers by ion implantation

Controlling the wavelength of InGaAs/GaAs/InGaP lasers by ion implantation

by: Akhlestina, S. A.
Published in: Technical physics letters (2010)

Other Authors: “...Nekorkin, S. M....”
lizenzpflichtig

electronic Article

16

Optimization of InGaP/GaAs/InGaAs heterolasers with tunnel-coupled waveguides

Optimization of InGaP/GaAs/InGaAs heterolasers with tunnel-coupled waveguides

by: Samartsev, I. V.
Published in: Semiconductors (2015)

Other Authors: “...Nekorkin, S. M....”
lizenzpflichtig

electronic Article

17

Effect of thermal annealing on the emission properties of heterostructures containing a quantum-confined GaAsSb layer

Effect of thermal annealing on the emission properties of heterostructures containing a quantum-confined GaAsSb layer

by: Dikareva, N. V.
Published in: Semiconductors (2015)

Other Authors: “...Nekorkin, S. M....”
lizenzpflichtig

electronic Article

18

Waveguide effect of GaAsSb quantum wells in a laser structure based on GaAs

Waveguide effect of GaAsSb quantum wells in a laser structure based on GaAs

by: Aleshkin, V. Ya.
Published in: Semiconductors (2013)

Other Authors: “...Nekorkin, S. M....”
lizenzpflichtig

electronic Article

19

Optical thyristor based on GaAs/InGaP materials

Optical thyristor based on GaAs/InGaP materials

by: Zvonkov, B. N.
Published in: Semiconductors (2017)

Other Authors: “...Nekorkin, S. M....”
lizenzpflichtig

electronic Article

20

Efficient generation of the first waveguide mode in the InGaAs/GaAs/InGaP heterolaser

Efficient generation of the first waveguide mode in the InGaAs/GaAs/InGaP heterolaser

by: Biryukov, A. A.
Published in: Semiconductors (2008)

Other Authors: “...Nekorkin, S. M....”
lizenzpflichtig

electronic Article

1
2
Next
[2]

Covers © buchhandel.de