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Lv, Yuanjie
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Electron mobility
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Enhancement mode
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P-GaN/AlGaN/GaN HFETs
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Parasitic source resistance
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Polarization Coulomb field scattering
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The influence of polarization Coulomb field scattering on the parasitic source resistance of E-mode P-GaN/AlGaN/GaN heterostructure field-effect transistors
by:
Jiang, Guangyuan
Published in:
Applied physics / A
(2021)
Subjects:
“
...misc Enhancement
mode
...
”
lizenzpflichtig
electronic Article
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electronic Article
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Jiang, Guangyuan
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Lin, Zhaojun
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Liu, Yan
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Liu, Yang
Lv, Yuanjie
Yu, Guohao
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